Straintronic magneto-tunneling-junction based ternary content addressable memory
نویسندگان
چکیده
memory S. Dey Manasi, M. M. Al Rashid, J. Atulasimha, S. Bandyopadhyay, and A. R. Trivedi Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 USA Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University USA, Richmond, VA 23284, USA Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University USA, Richmond, VA 23284, USA Department of Electrical and Computer Engineereing, Virginia Commonwealth University, Richmond, VA 23284, USA Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607, USA
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ورودعنوان ژورنال:
- CoRR
دوره abs/1610.03902 شماره
صفحات -
تاریخ انتشار 2016