Straintronic magneto-tunneling-junction based ternary content addressable memory

نویسندگان

  • Susmita Dey Manasi
  • M. M. Al Rashid
  • J. Atulasimha
  • S. K. Bandyopadhyay
  • Amit Ranjan Trivedi
چکیده

memory S. Dey Manasi, M. M. Al Rashid, J. Atulasimha, S. Bandyopadhyay, and A. R. Trivedi Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 USA Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University USA, Richmond, VA 23284, USA Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University USA, Richmond, VA 23284, USA Department of Electrical and Computer Engineereing, Virginia Commonwealth University, Richmond, VA 23284, USA Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607, USA

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عنوان ژورنال:
  • CoRR

دوره abs/1610.03902  شماره 

صفحات  -

تاریخ انتشار 2016